Void-free room-temperature silicon wafer direct bonding using sequential plasma activation (Special issue: Solid state devices and materials)

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Void-free room-temperature silicon wafer direct bonding using sequential plasma activation(Special issue: Solid state devices and materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
9477465
Material type
記事
Author
Chenxi Wangほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2008-04
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 47(4) (2) 2008.4
Publication Page
p.2526~2530
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Detailed bibliographic record

Summary, etc.:

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌(Provided by: CiNii Research)

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Chenxi Wang
Eiji Higurashi
Tadatomo Suga
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
47(4) (2) 2008.4
Volume
47
Issue
4
Other Volume
2