マイクロ波光導電減衰法によるp型4H-SiCエピタキシャル膜の評価 (電子部品・材料)

マイクロ波光導電減衰法によるp型4H-SiCエピタキシャル膜の評価

(電子部品・材料)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 108(35) 2008.5.15・16

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Material Type: 記事
Title: マイクロ波光導電減衰法によるp型4H-SiCエピタキシャル膜の評価
Author/Editor: 松下由憲
加藤正史
市村正也他
Series Title: 電子部品・材料
Author Heading: 松下由憲
加藤正史
市村正也
Alternative Title: Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 108(35) 2008.5.15・16
Volume: 108
Issue: 35
Pages: 95～100
Publication date of volume/issue (W3CDTF): 2008-05
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 4H-SiC
キャリアライフタイム
μ-PCD法
減衰曲線
電子線照射
数値計算
注入フォトン数
carrier lifetime
μ-PCDmethod
decay curve
electron irradiation
calculation
injection level
NDLC: ZN33
Target Audience: 一般
Report No. (Article): CPM2008-28
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 9527839
http://id.ndl.go.jp/bib/9527839
Bibliographic Record Category (NDL): 632