微傾斜SiC(0001)表面上の酸窒化シリコン薄膜の作製と低速電子回折による構造解析

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微傾斜SiC(0001)表面上の酸窒化シリコン薄膜の作製と低速電子回折による構造解析

Call No. (NDL)
Z15-243
Bibliographic ID of National Diet Library
9671434
Material type
記事
Author
水野 清義ほか
Publisher
東京 : 応用物理学会
Publication date
2008-10
Material Format
Paper
Journal name
応用物理 77(10) 2008.10
Publication Page
p.1240~1243
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Paper Digital

Material Type
記事
Author/Editor
水野 清義
白澤 徹郎
田中 悟 他
Alternative Title
Formation of silicon oxynitride on vicinal SiC(0001) and structure determination using low-energy electron diffraction
Periodical title
応用物理
No. or year of volume/issue
77(10) 2008.10
Volume
77
Issue
10
Pages
1240~1243