MOSFETのサブスレッショルド特性を利用した超低消費電力CMOS参照電圧源回路(情報センシング)

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Material Type: 記事
Title: MOSFETのサブスレッショルド特性を利用した超低消費電力CMOS参照電圧源回路
Author/Editor: 上野憲一
廣瀬哲也
浅井哲也他
Series Title: 情報センシング
Author Heading: 上野憲一
廣瀬哲也
浅井哲也
Alternative Title: An ultra-low power voltage reference circuit consisting of subthreshold MOSFETs
Periodical title: 映像情報メディア学会技術報告 = ITE technical report
No. or year of volume/issue: 32(45) 2008.10
Volume: 32
Issue: 45
Pages: 55～60
Publication date of volume/issue (W3CDTF): 2008-10
ISSN (Periodical Title): 1342-6893
ISSN-L (Periodical Title): 1342-6893
Publication (Periodical Title): 東京 : 映像情報メディア学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: CMOS
参照電圧源
サブスレッショルド(弱反転)領域
線形領域
極低消費電力
Voltage reference
Subthreshold region
Weak-inversion
deep triode region
Ultra-low power
NDLC: ZN33
Target Audience: 一般
Report No. (Article): IST2008-52
Holding library: 国立国会図書館
Call No.: Z16-1010
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 9709742
http://id.ndl.go.jp/bib/9709742
Bibliographic Record Category (NDL): 632