雑誌電子情報通信学会技術研究報告 : 信学技報
Volume number108(329)-108(335) 20081200-20081200
Article抵抗変化型不揮発性メ...

抵抗変化型不揮発性メモリ用NiO薄膜の構造および電気特性へのアニール効果 (シリコン材料・デバイス)

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抵抗変化型不揮発性メモリ用NiO薄膜の構造および電気特性へのアニール効果

(シリコン材料・デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
9762470
Material type
記事
Author
西 佑介ほか
Publisher
東京 : 電子情報通信学会
Publication date
2008-12-05
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 108(335) 2008.12.5
Publication Page
p.1～4
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Paper

Material Type
記事
Title
抵抗変化型不揮発性メモリ用NiO薄膜の構造および電気特性へのアニール効果
Author/Editor
西 佑介
木本 恒暢
Series Title
シリコン材料・デバイス
Author Heading
西 佑介
木本 恒暢
Alternative Title
Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
108(335) 2008.12.5
Volume
108
Issue
335