Preparation of Oxygenated Fullerene Thin Film for Photoelectric Devices.

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Summary, etc.：: In order to obtain a higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as a insulator thin...

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Material Type: 記事
Title: Preparation of Oxygenated Fullerene Thin Film for Photoelectric Devices.
Volume: 40
2B
Author/Editor: Yang Sung-Chae
Mieno Tetsu
Author Heading: Yang Sung-Chae
Mieno Tetsu
Publication Date: 2001
Publication Date (W3CDTF): 2001
Periodical title: Japanese Journal of Applied Physics
No. or year of volume/issue: 40 2B
Volume: 40
Issue: 2B
Pages: 1067-1069
ISSN (Periodical Title): 0021-4922
1347-4065
Subject Heading: photocurrent
photoelectric device
RF plasma
oxygenated fullerene
multilayer film
Target Audience: 一般
DOI: 10.1143/JJAP.40.1067
Access Restrictions: インターネット公開
Data Provider (Database): 科学技術振興機構 : J-STAGE
http://www.jstage.jst.go.jp