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γ線照射によるガラス...

γ線照射によるガラス中の電荷蓄積についての考察

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γ線照射によるガラス中の電荷蓄積についての考察

Call No. (NDL)
Z17-249
Bibliographic ID of National Diet Library
3119185
Material type
記事
Author
川本 貴道ほか
Publisher
東京 : 窯業協会
Publication date
1987-03
Material Format
Paper
Journal name
窯業協会誌 95(3) 1987.03
Publication Page
p.p330~335
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Bibliographic Record

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Paper

Material Type
記事
Author/Editor
川本 貴道
川西 政治
Periodical title
窯業協会誌
No. or year of volume/issue
95(3) 1987.03
Volume
95
Issue
3
Pages
p330~335
Publication date of volume/issue (W3CDTF)
1987-03
ISSN (Periodical Title)
0009-0255
ISSN-L (Periodical Title)
0009-0255
Publication (Periodical Title)
東京 : 窯業協会
Place of Publication (Country Code)
JP
Text Language Code
jpn
NDLC
Target Audience
一般
Article Type
記事分類: 化学・化学工業--無機化学・無機化学工業--非金属元素・非金属化合物--セラミックス--ガラス
Holding library
国立国会図書館
Call No.
Z17-249
Data Provider (Database)
国立国会図書館 : 国立国会図書館雑誌記事索引
Bibliographic ID (NDL)
3119185
Bibliographic Record Category (NDL)
632

Digital

Summary, etc.
The authors reported the thermally stimulated current (TSC) and thermo luminescence (TL) of γ-irradiated radiation shielding glass in I. C. G., 1966. The present paper is concerned with the details of the report. From the data, it has been clarified that the thermal functions of negative and positive charges which are produced in the surface region by γ-irradiation are as follows.<br>(1) When the glass surface is irradiated by X- or γ-ray from one direction, the surface is positively charged because electrons produced by photon-electric or Compton effect have a momentum to the inner part of glass.<br>(2) Therefore, it is considered that thin electric double layer is produced in the surface layer of which field strength depends on the γ-ray dose, initial photon energy and on the electrical property of the glass.<br>(3) By heating the irradiated glass, the trapped electrons released in the vicinity of the electric double layer drift forward to the positively charged surface, because TSC is observed at lower temperature than temperature of positive ion conductivity. According to the content of luminescent impurity atoms, TL is also observed. The mechanism of electric breakdown of shielding glass is clarified when it is exposed by γ-ray for a long time. The above considerations, showed that thermal annealing is an important process to prevent the accumulation of electric charges in the glass.
DOI
10.2109/jcersj1950.95.1099_330
Access Restrictions
インターネット公開
Data Provider (Database)
科学技術振興機構 : J-STAGE

Digital

Summary, etc.
The authors reported the thermally stimulated current (TSC) and thermo luminescence (TL) of γ-irradiated radiation shielding glass in I. C. G., 1966. The present paper is concerned with the details of the report. From the data, it has been clarified that the thermal functions of negative and positive charges which are produced in the surface region by γ-irradiation are as follows.<br>(1) When the glass surface is irradiated by X- or γ-ray from one direction, the surface is positively charged because electrons produced by photon-electric or Compton effect have a momentum to the inner part of glass.<br>(2) Therefore, it is considered that thin electric double layer is produced in the surface layer of which field strength depends on the γ-ray dose, initial photon energy and on the electrical property of the glass.<br>(3) By heating the irradiated glass, the trapped electrons released in the vicinity of the electric double layer drift forward to the positively charged surface, because TSC is observed at lower temperature than temperature of positive ion conductivity. According to the content of luminescent impurity atoms, TL is also observed. The mechanism of electric breakdown of shielding glass is clarified when it is exposed by γ-ray for a long time. The above considerations, showed that thermal annealing is an important process to prevent the accumulation of electric charges in the glass.
Access Restrictions
インターネット公開
Data Provider (Database)
国立情報学研究所 : CiNii Research
Original Data Provider (Database)
Japan Link Center
雑誌記事索引データベース
Crossref
CiNii Articles
Bibliographic ID (NDL)
3119185
NAID
110002313600