シリコン表面の非熱的応力緩和とその微細構造

Name of awarding university/degree: 筑波大学,博士（理学）,Doctor of Philosophy in Science

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Summary, etc.：: A new mechanism of recrystallization is presented in this thesis by using irradiation of very low energy electron on the disordered surfaces of Si. Th...

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Material Type: 博士論文
Title: シリコン表面の非熱的応力緩和とその微細構造
Author/Editor: 成島, 哲也
Author Heading: 成島, 哲也
Publication Date: 2002
Publication Date (W3CDTF): 2002
Alternative Title: Athermal stress release of silicon surface and the microscopic structure
Degree grantor/type: 筑波大学
Date Granted: 2002-03-25
Dissertation Number: 甲第2847号
Degree Type: 博士（理学）
Doctor of Philosophy in Science
Text Language Code: eng
Target Audience: 一般
Note (General): 2001
Includes bibliographical references
Format (IMT): application/pdf
Source: fulltext
https://tsukuba.repo.nii.ac.jp/record/8287/files/1.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 筑波大学 : つくばリポジトリ