CMOS向け高誘電率ゲート絶縁膜の長期信頼性

Name of awarding university/degree: 筑波大学,博士（工学）,Doctor of Philosophy in Engineering

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Material Type: 博士論文
Title: CMOS向け高誘電率ゲート絶縁膜の長期信頼性
Author/Editor: 藤井, 泉
Author Heading: 藤井, 泉
Publication Date: 2014
Publication Date (W3CDTF): 2014
Degree grantor/type: 筑波大学
Date Granted: 2014-02-28
Dissertation Number: 甲第6749号
Degree Type: 博士（工学）
Doctor of Philosophy in Engineering
Text Language Code: jpn
Target Audience: 一般
Note (General): 2013
Format (IMT): application/pdf
Source: fulltext
https://tsukuba.repo.nii.ac.jp/record/32309/files/DA06749.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 筑波大学 : つくばリポジトリ