Engineering of impurity doped regions in semiconducting BaSi[2] by MBE for thin film solar cells application

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Engineering of impurity doped regions in semiconducting BaSi[2] by MBE for thin film solar cells application

Notes on use

Note (General)：: 2012On t.p. "[2]" is subscript Includes bibliographical references (p. 83-85)

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Material Type: 博士論文
Title: Engineering of impurity doped regions in semiconducting BaSi[2] by MBE for thin film solar cells application
Author/Editor: Khan, Muhammad Ajmal
Author Heading: Khan, Muhammad Ajmal
Publication Date: 2013-02
Publication Date (W3CDTF): 2013
Degree grantor/type: 筑波大学
University of Tsukuba
Dissertation Number: 甲第6403号
Degree Type: 博士（工学）
Target Audience: 一般
Note (General): 2012
On t.p. "[2]" is subscript Includes bibliographical references (p. 83-85)
Format (IMT): application/pdf
Source: https://tsukuba.repo.nii.ac.jp/record/38810/files/PhD Final_Thesis_Pdf.pdf （fulltext）
https://tsukuba.repo.nii.ac.jp/record/38810/files/PhD%20Final_Thesis_Pdf.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 筑波大学 : つくばリポジトリ