炭化ケイ素（SiC）MOS界面準位の起源と移動度劣化メカニズムの分光学的解明

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Material Type: 文書・図像類
Title: 炭化ケイ素（SiC）MOS界面準位の起源と移動度劣化メカニズムの分光学的解明
Author/Editor: 藤ノ木, 享英
梅田, 享英
Author Heading: 藤ノ木, 享英
梅田, 享英ウメダ, タカヒデ
Publication Date: 2016
Publication Date (W3CDTF): 2016
Alternative Title: Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation
Text Language Code: jpn
Target Audience: 一般
Note (General): 科学研究費助成事業研究成果報告書：基盤研究(B)2013-2015課題番号 : 25286054
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 筑波大学 : つくばリポジトリ