InAlN層におけるデバイスプロセス中に発生した欠陥評価とその電気的特性への影響

Notes on use

Search by Bookstore

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

Tulips-R
Digital
You can check the holdings of institutions and databases with which Institutional Repositories DataBase(IRDB)(Institutional Repository) is linked at the site of Institutional Repositories DataBase(IRDB)(Institutional Repository).
Tulips-R

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 文書・図像類
Title: InAlN層におけるデバイスプロセス中に発生した欠陥評価とその電気的特性への影響
Author/Editor: 奥村宏典
Author Heading: 奥村宏典
Publication Date: 2017
Publication Date (W3CDTF): 2017
Alternative Title: Defect Evaluation of InAlN after Device Process and their Electrical Properties
Text Language Code: jpn
Target Audience: 一般
Note (General): 科学研究費助成事業研究成果報告書：研究活動スタート支援2015-2016課題番号 : 15H06070
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 筑波大学 : つくばリポジトリ