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単原子層FETデバイスにおける電子間クーロン相互作用と室温動作特性の予測

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単原子層FETデバイスにおける電子間クーロン相互作用と室温動作特性の予測

Material type
文書・図像類
Author
佐野, 伸行
Publisher
-
Publication date
2018
Material Format
Digital
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Notes on use

Note (General):

科学研究費助成事業 研究成果報告書:基盤研究(B)2015-2017課題番号 : 15H03983

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Digital

Material Type
文書・図像類
Author/Editor
佐野, 伸行
Author Heading
佐野, 伸行 サノ, ノブユキ
Publication Date
2018
Publication Date (W3CDTF)
2018
Alternative Title
Coulomb Interaction in Atomic-Layer FET Devices and Realistic Prediction of Device Characteristics
Text Language Code
jpn
Target Audience
一般
Note (General)
科学研究費助成事業 研究成果報告書:基盤研究(B)2015-2017課題番号 : 15H03983