窒素極性面AlNの接触抵抗低減と分極効果トランジスタの実現

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Material Type: 文書・図像類
Title: 窒素極性面AlNの接触抵抗低減と分極効果トランジスタの実現
Author/Editor: 奥村宏典
Author Heading: 奥村宏典
Publication Date: 2019
Publication Date (W3CDTF): 2019
Alternative Title: Reduction of contact resistance and demonstration of nitrogen-polar AlN field-effect transistors
Text Language Code: jpn
Target Audience: 一般
Note (General): 科学研究費助成事業研究成果報告書：若手研究(B)2017-2018課題番号 : 17K14110
Access Restrictions: インターネット公開
Related Material (URI): URI
https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-17K14110/
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 筑波大学 : つくばリポジトリ