High Frequency ESR in Phosphorus Doped Silicon as a Candidate Material of Quantum Computer -Line Shape Affected by Long Relaxation Time-

Material type: 文書・図像類

Author: 千葉, 明朗ほか

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Publication date: 2008-09

Material Format: Digital

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Note (General)：: In these years the quantum computer has attracted much attention. Above all,as proposed by Kane,the donor nuclear spin in phosphorus-doped silicon is ...

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Material Type: 文書・図像類
Title: High Frequency ESR in Phosphorus Doped Silicon as a Candidate Material of Quantum Computer -Line Shape Affected by Long Relaxation Time-
Author/Editor: 千葉, 明朗
光藤, 誠太郎
杉山, 和裕
上野, 智弘
水崎, 隆雄
Author Heading: 千葉, 明朗
光藤, 誠太郎
杉山, 和裕
上野, 智弘
水崎, 隆雄
Publication Date: 2008-09
Publication Date (W3CDTF): 2008-09
Alternative Title: 量子コンピュータ候補物質P-doped Siの高周波電子スピン共鳴 : 緩和時間に依存する共鳴線型の考察
Periodical title: 遠赤外領域開発研究
No. or year of volume/issue: 9
Volume: 9
Pages: 127-134
Text Language Code: eng
Target Audience: 一般
Note (General): In these years the quantum computer has attracted much attention. Above all,as proposed by Kane,the donor nuclear spin in phosphorus-doped silicon is one of the good candidate for the qubit. In order to study the properties of the nuclear spin from the view-point of electron spin resonance we perform high frequency ESR experiment. At low temperature an anomalous resonance line shape was observed. Models for the anomalous line shape is proposed.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=27253&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=27253&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ