An Indium Surfactant Effect in Cubic GaN Rf-MBE Growth

Material type: 文書・図像類

Author: NISHIO, Yukihiroほか

Publisher: The Institute of Pure and Applied Physics

Publication date: 2000-11-30

Material Format: Digital

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Note (General)：: Effect of In beam irradiation during GaN growth on GaAs (001) substrate by rf-molecular beam epitaxy has been investigated. Surface morphology and FWH...

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Material Type: 文書・図像類
Title: An Indium Surfactant Effect in Cubic GaN Rf-MBE Growth
Author/Editor: NISHIO, Yukihiro
MORI, Hiroki
MASUDA, Atsushi
YAMAMOTO, Akio
HASHIMOTO, Akihiro
Author Heading: NISHIO, Yukihiro
MORI, Hiroki
MASUDA, Atsushi
YAMAMOTO, Akio
HASHIMOTO, Akihiro
Publication, Distribution, etc.: The Institute of Pure and Applied Physics
Publication Date: 2000-11-30
Publication Date (W3CDTF): 2000-11-30
Periodical title: Proceedings of International Workshop on Nitride Semiconductors
Pages: 178-181
Text Language Code: eng
Subject Heading: cubic GaN
rf-MBE
In beam irradiation
In surfactant effect
surface morphology
Target Audience: 一般
Note (General): Effect of In beam irradiation during GaN growth on GaAs (001) substrate by rf-molecular beam epitaxy has been investigated. Surface morphology and FWHM of X-ray diffraction patterns of the GaN grown layers under the In beam irradiatian become smoother and narrower than the non-irradiation cases. The results strongly indicate that the In beam irradiation has a surfactant effecf in the c-GaN growth.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22177&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22177&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ