Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN

Material type: 文書・図像類

Author: ADACHI, Masatoほか

Publisher: The Institute of Pure and Applied Physics

Publication date: 2000-11-30

Material Format: Digital

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Note (General)：: We report that In content included in high-temperature grown InN is markedly dependent on substrate surface before the growth. It is found that InN gr...

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Material Type: 文書・図像類
Title: Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN
Author/Editor: ADACHI, Masato
SEKI, Akihisa
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Author Heading: ADACHI, Masato
SEKI, Akihisa
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Publication, Distribution, etc.: The Institute of Pure and Applied Physics
Publication Date: 2000-11-30
Publication Date (W3CDTF): 2000-11-30
Periodical title: Proceedings of International Workshop on Nitride Semiconductors
Pages: 347-350
Text Language Code: eng
Subject Heading: In drop
InN
substrate surface
polarity
MOVPE
Target Audience: 一般
Note (General): We report that In content included in high-temperature grown InN is markedly dependent on substrate surface before the growth. It is found that InN grown on 1000℃-grown GaN has a much higher In content compared with that on nitrided a-Al_2O_3 surface. A marked V/III-ratio dependence of In content is observed on the GaN surfaces, while such a dependence is scarcely found on the nitrided a-Al_2O_3 surface. Surface polarity of GaN and InN grown on it are found to be responsible for In drop formation.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22181&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22181&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ