Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures

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Author: Tokuda, Hirokuniほか

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Publication date: 2012-12

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Note (General)：: A mechanism for ohmic contact formation using Ti/Al based metals on AlGaN/GaN heterostructures has been investigated by measuring temperature dependen...

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Material Type: 文書・図像類
Title: Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures
Author/Editor: Tokuda, Hirokuni
Kojima, Toshikazu
Kuzuhara, Masaaki
Author Heading: Tokuda, Hirokuni
Kojima, Toshikazu
Kuzuhara, Masaaki
Publication Date: 2012-12
Publication Date (W3CDTF): 2012-12
Periodical title: Applied Physics Letters
No. or year of volume/issue: 101
Volume: 101
Pages: 262104-
Text Language Code: eng
Subject Heading: GaN
ohmic contact
Target Audience: 一般
Note (General): A mechanism for ohmic contact formation using Ti/Al based metals on AlGaN/GaN heterostructures has been investigated by measuring temperature dependence of sheet electron density (ns) and mobility (μ). It was found that both ns and μ at room temperature for Ti/Al deposited sample were increased by annealing in vacuum, while not for Al/Ti deposited one. The results, especially increase in μ, cannot be understood by the conventional ohmic formation model, including Ti-N (nitrogen) complex formation or N vacancy formation. As the most probable mechanism for the increase in ns and μ, we have proposed a model, in which tensile strain is induced by the reaction of Ti/Al and AlGaN after annealing.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22874&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22874&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ