A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation

Material type: 文書・図像類

Author: Kodama, Kazukiほか

Publisher: AIP Publishing LLC.

Publication date: 2013-07

Material Format: Digital

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Note (General)：: A model for calculating impact ionization transition rate (IITR) in wurtzite GaN has been developed for use in breakdown voltage simulations. The char...

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Material Type: 文書・図像類
Title: A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation
Author/Editor: Kodama, Kazuki
Tokuda, Hirokuni
Kuzuhara, Masaaki
Author Heading: Kodama, Kazuki
Tokuda, Hirokuni
Kuzuhara, Masaaki
Publication, Distribution, etc.: AIP Publishing LLC.
Publication Date: 2013-07
Publication Date (W3CDTF): 2013-07
Periodical title: Journal of Applied Physics
No. or year of volume/issue: 114 4
Volume: 114
Issue: 4
Pages: 44509-044509-6
Text Language Code: eng
Target Audience: 一般
Note (General): A model for calculating impact ionization transition rate (IITR) in wurtzite GaN has been developed for use in breakdown voltage simulations. The characteristic feature of the model is to calculate energy-dependent IITR by taking a conduction band index into account. Depending on the band index, the IITR values calculated by the proposed model show spreading by three orders of magnitude in the electron energy range from 6.5 to 8 eV, while this spreading is totally disregarded in the conventional model. An impact ionization coefficient is calculated based on a full band Monte Carlo simulation which incorporates IITRs by the proposed model. The calculated impact ionization coefficients by the proposed model exhibit better agreements with those by the rigorous model. The proposed model is applied to the calculation of breakdown characteristics for AlGaN/GaN HEMTs and demonstrates a higher breakdown voltage by about 30% than that by the conventional model.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=23011&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=23011&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ