Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

Material type: 文書・図像類

Author: Hasan, Md. Tanvirほか

Publisher: Institute of Electrical and Electronics Engineers

Publication date: 2013-11

Material Format: Digital

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Note (General)：: Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with differ...

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Material Type: 文書・図像類
Title: Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
Author/Editor: Hasan, Md. Tanvir
Asano, Takashi
Tokuda, Hirokuni
Kuzuhara, Masaaki
Author Heading: Hasan, Md. Tanvir
Asano, Takashi
Tokuda, Hirokuni
Kuzuhara, Masaaki
Publication, Distribution, etc.: Institute of Electrical and Electronics Engineers
Publication Date: 2013-11
Publication Date (W3CDTF): 2013-11
Periodical title: IEEE Electrpm Device Letters
No. or year of volume/issue: 34 11
Volume: 34
Issue: 11
Pages: 1379-1381
Text Language Code: eng
Subject Heading: AlGaN/GaN high-electron-mobility transistors (HEMT)
current collapse,
field plate (FP)
ON-resistance
Target Audience: 一般
Note (General): Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON-resistance for the FP device, whereas no gate-bias effects were observed for the device without FP. The mechanism responsible for the reduced current collapse by FP is proposed, in which the key role is played during ON-state by the quick fieldeffect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ