Intense terahertz emission from MBE-grown GaAs/GaSb(001)

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Author: Sadia, Cyrilほか

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Publication date: 2012-12

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Note (General)：: Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam...

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Material Type: 文書・図像類
Title: Intense terahertz emission from MBE-grown GaAs/GaSb(001)
Author/Editor: Sadia, Cyril
Laganapan, Aleena Maria
Tumanguil, Mae Agatha
Estacio, Elmer
Somintac, Armando
Salvador, Arnel
Que, Christopher
Yamamoto, Kohji
Tani, Masahiko
Author Heading: Sadia, Cyril
Laganapan, Aleena Maria
Tumanguil, Mae Agatha
Estacio, Elmer
Somintac, Armando
Salvador, Arnel
Que, Christopher
Yamamoto, Kohji
Tani, Masahiko
Publication Date: 2012-12
Publication Date (W3CDTF): 2012-12
Periodical title: Journal of Applied Physics
No. or year of volume/issue: 112 12
Volume: 112
Issue: 12
Pages: 123514-
Text Language Code: eng
Subject Heading: terahertz
Target Audience: 一般
Note (General): Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22402&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22402&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ