Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere

Material type: その他

Author: SUGITA, Kほか

Publisher: Wiley-VCH Verlag

Publication date: 2008-05

Material Format: Digital

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Note (General)：: 出版タイプ： AOWe have found that the material quality of MOVPE InN can be markedly improved after the annealing in the air at around 300 °C. By the anneali...

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Material Type: その他
Title: Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere
Author/Editor: SUGITA, K
NAGAI, Y
MATSUOKA, D
HASHIMOTO, A
HARIMA, H
YAMAMOTO, A
Author Heading: SUGITA, K
NAGAI, Y
MATSUOKA, D
HASHIMOTO, A
HARIMA, H
YAMAMOTO, A
Publication, Distribution, etc.: Wiley-VCH Verlag
Publication Date: 2008-05
Publication Date (W3CDTF): 2008
Periodical title: Physica status solidi. C
No. or year of volume/issue: 5 6
Volume: 5
Issue: 6
Pages: 1765-1767
ISSN (Periodical Title): ISSN : 1610-1634
Target Audience: 一般
Note (General): 出版タイプ： AO
We have found that the material quality of MOVPE InN can be markedly improved after the annealing in the air at around 300 °C. By the annealing in the air, carrier concentration is reduced by about one order of magnitude. In accordance with the carrier reduction, PL intensity is increased and PL peak energy is shifted to the lower energy side by about 0.06 eV for the film annealed for 3 h. The reduction of carrier concentration is also conformed by the shift of LO phonon-plasmon coupled mode in the Raman spectrum. The FWHM of the E_2 (high) mode is decreased, indicating that the crystalline quality is slightly improved by the annealing. Since the FWHM of X-ray rocking curve is not changed after the annealing, the improvement by the annealing is concluded not to be in macroscopic scale but microscopic scale. No improvements are found for the samples annealed in the N_2 flow. No data that show the chemical oxidation of InN are also found.
Related Material (DOI): 10.1002/pssc.200778630
https://doi.org/10.1002/pssc.200778630
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ