Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

Material type: 文書・図像類

Author: 康, 亭亭ほか

Publisher: American Institute of Physics

Publication date: 2009-08

Material Format: Digital

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Note (General)：: Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservati...

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Material Type: 文書・図像類
Title: Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition
Author/Editor: 康, 亭亭
山本, 政智
田中, 幹康
橋本, 明弘
山本, 暠勇
KANG, Ting-Ting
YAMAMOTO, Masatomo
TANAKA, Mikiyasu
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Author Heading: 康, 亭亭
山本, 政智
田中, 幹康
橋本, 明弘
山本, 暠勇
KANG, Ting-Ting
YAMAMOTO, Masatomo
TANAKA, Mikiyasu
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Publication, Distribution, etc.: American Institute of Physics
Publication Date: 2009-08
Publication Date (W3CDTF): 2009-08
Periodical title: Journal of Applied Physics
No. or year of volume/issue: 106
Volume: 106
Pages: 053525-1-053525-4
Text Language Code: eng
Target Audience: 一般
Note (General): Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, the effects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction are investigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e., enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorily shown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1-xN can be tuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation are analyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we propose a phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow.
Access Restrictions: 限定公開
Rights (production): American Institute of Physics
Related Material (DOI): 10.1063/1.3212969
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ