Measurement of Carrier Parameters in InSb Using Faraday Rotation

Material type: 文書・図像類

Author: OGAWA, Iほか

Publisher: Springer Verlag

Publication date: 2003-05

Material Format: Digital

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Note (General)：: Carrier properties of n-type InSb doped with tellurium at liquid nitrogen temperature have been estimated by means of transmission of a millimeter wav...

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Material Type: 文書・図像類
Title: Measurement of Carrier Parameters in InSb Using Faraday Rotation
Author/Editor: OGAWA, I
YAMADA, K
IDEHARA, T
TSUSHIMA, A
YAMAGUCHI, S
Author Heading: OGAWA, I
YAMADA, K
IDEHARA, T
TSUSHIMA, A
YAMAGUCHI, S
Publication, Distribution, etc.: Springer Verlag
Publication Date: 2003-05
Publication Date (W3CDTF): 2003-05
Periodical title: International Journal of Infrared and Millimeter Waves
No. or year of volume/issue: 24 5
Volume: 24
Issue: 5
Pages: 651-660
Text Language Code: eng
Subject Heading: Faraday rotation
semiconductor
carrier mass
carrier density
dielectric constant
Target Audience: 一般
Note (General): Carrier properties of n-type InSb doped with tellurium at liquid nitrogen temperature have been estimated by means of transmission of a millimeter wave (119.3 GHz) propagating along a magnetic field with intensity up to 4 T. The information on carrier properties is obtained from the Faraday rotation arising from the difference between phase velocities of two circularly polarized components. The advantage of this method lies in the fact that it allows both the electron density and effective mass to be measured simultaneously.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22587&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22587&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Related Material (DOI): 10.1023/A:1023355430196
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ