A new photoreflectance signal possibly due to midgap interface states in buried F-doped SnO2/TiO2 junctions

Material type: 文書・図像類

Author: Eiichi, Kobayashiほか

Publisher: IOP Publishing

Publication date: 2019-12-09

Material Format: Digital

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Note (General)：: A new optical anomaly has been found in photoreflectance spectra at temperatures above 250 K at spray-pyrolysis-deposited junctions composed of F-dope...

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Material Type: 文書・図像類
Title: A new photoreflectance signal possibly due to midgap interface states in buried F-doped SnO2/TiO2 junctions
Author/Editor: Eiichi, Kobayashi
Shuhei, Shimmura
Seigo, Ito
Takayuki, Makino
Author Heading: Eiichi, Kobayashi
Shuhei, Shimmura
Seigo, Ito
Takayuki, Makino
Publication, Distribution, etc.: IOP Publishing
Publication Date: 2019-12-09
Publication Date (W3CDTF): 2019-12-09
Periodical title: Japanese Journal of Applied Physics
No. or year of volume/issue: 59 SC
Volume: 59
Issue: SC
Pages: SCCB23--5
ISSN (Periodical Title): ISSN : 0021-4922
ISSN : 1347-4065
Text Language Code: eng
Subject Heading: modulation spectroscopy
semiconductor interface
solar cells
Target Audience: 一般
Note (General): A new optical anomaly has been found in photoreflectance spectra at temperatures above 250 K at spray-pyrolysis-deposited junctions composed of F-doped SnO2 and anatase TiO2 junctions. The energetic position of this anomaly at room temperature is considerably lower than those associated with the bulk optical transitions of TiO2. Its intensity monotonically grows against the temperature rise. These experimental facts suggest that the new anomaly comes from optical transition from the valence band of TiO2 to midgap interface states.
Access Restrictions: 限定公開
Related Material (DOI): 10.7567/1347-4065/ab54f8
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ