Tunable electronic properties in bismuthene : 2D silicon carbide van der Waals heterobilayer

Material type: 文書・図像類

Author: Joy, Deep Sarkerほか

Publisher: IOP Publishing

Publication date: 2019-11-29

Material Format: Digital

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Note (General)：: A comprehensive analysis of the structural and electronic properties of a novel 2D bismuthene and silicon carbide (SiC) van der Waals heterostructure ...

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Material Type: 文書・図像類
Title: Tunable electronic properties in bismuthene : 2D silicon carbide van der Waals heterobilayer
Author/Editor: Joy, Deep Sarker
Md, Sherajul Islam
Naim, Ferdous
Pantha, P Sarker
Ashraful, Ghani Bhuiyan
Takayuki, Makino
Akihiro, Hashimoto
Author Heading: Joy, Deep Sarker
Md, Sherajul Islam
Naim, Ferdous
Pantha, P Sarker
Ashraful, Ghani Bhuiyan
Takayuki, Makino
Akihiro, Hashimoto
Publication, Distribution, etc.: IOP Publishing
Publication Date: 2019-11-29
Publication Date (W3CDTF): 2019-11-29
Periodical title: Japanese Journal of Applied Physics
No. or year of volume/issue: 59 SC
Volume: 59
Issue: SC
Pages: SCCC03--12
ISSN (Periodical Title): ISSN : 0021-4922
ISSN : 1347-4065
Text Language Code: eng
Subject Heading: electronic structure
bismuth
interface
low-dimensional materials
Target Audience: 一般
Note (General): A comprehensive analysis of the structural and electronic properties of a novel 2D bismuthene and silicon carbide (SiC) van der Waals heterostructure is performed using first-principles calculation. The electronic structure of the proposed heterobilayer can be effectively tuned by changing the interlayer distance as well as upon the application of biaxial strain. The inclusion of spin–orbit coupling results in the splitting in the CB and VB with a greater reduction in the band gap. The calculated projected density of states and space-charge distribution near the CB and VB reveals the carrier confinement at the bismuthene layer only, indicating the prospect of 2D-SiC as a potential substrate for the realization of bismuthene-based heterostructure. Lower electron effective mass is computed, which dictates the higher electron mobility on the heterobilayer. These intriguing findings will manifest a new path for the realization of bismuthene-based high-speed nanoelectronic devices.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=24738&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=24738&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Related Material (DOI): 10.7567/1347-4065/ab48b5
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ