Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Material type: 文書・図像類

Author: Afalla, Jessica P. C.ほか

Publisher: American Institute of Physics

Publication date: 2017-12-11

Material Format: Digital

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Note (General)：: Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaA...

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Material Type: 文書・図像類
Title: Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates
Author/Editor: Afalla, Jessica P. C.
de los Reyes, Alexander
Mag-usara, Valynn Katrine
Lopez, Lorenzo P.
Yamamoto, Kohji
Tani, Masahiko
Somintac, Armando S.
Salvador, Arnel A.
Estacio, Elmer S.
Author Heading: Afalla, Jessica P. C.
de los Reyes, Alexander
Mag-usara, Valynn Katrine
Lopez, Lorenzo P.
Yamamoto, Kohji
Tani, Masahiko
Somintac, Armando S.
Salvador, Arnel A.
Estacio, Elmer S.
Publication, Distribution, etc.: American Institute of Physics
Publication Date: 2017-12-11
Publication Date (W3CDTF): 2017-12-11
Alternative Title: Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates
Periodical title: AIP Advances
No. or year of volume/issue: 7 12
Volume: 7
Issue: 12
Pages: 125210-125210
ISSN (Periodical Title): ISSN : 2158-3226
Text Language Code: eng
Target Audience: 一般
Note (General): Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but having different defect profiles. The on-axis sample had a higher defect density and more types of electron traps than the off-axis counterpart. Temperature-dependent terahertz (THz) emission and temperature-dependent photoluminescence were measured; in both cases, an intensity quenching was observed between 75 K – 250 K for the on-axis sample, but not in the off-axis sample. We attribute the THz emission quenching to the electron traps present in the sample, which decreases the photocarriers participating in setting up the surface field.
Access Restrictions: 限定公開
Related Material (DOI): 10.1063/1.5004597
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ