Single Electron Transistor using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate

Journal name: Extended Abstracts of the 2001 International Conference on SOLID STATE DEVICES AND MATERIALS, Tokyo, 2001 P-1-16

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Material Type: 記事
Title: Single Electron Transistor using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate
Author/Editor: 川崎, 宏治
KAWASAKI, KOJI
Author Heading: 川崎, 宏治
KAWASAKI, KOJI
Publication Date: 2001
Publication Date (W3CDTF): 2001
Periodical title: Extended Abstracts of the 2001 International Conference on SOLID STATE DEVICES AND MATERIALS, Tokyo, 2001
No. or year of volume/issue: P-1-16
Volume: P-1-16
Pages: 430-431
Target Audience: 一般
Note (General): 出版タイプ： NA
identifier:oai:t2r2.star.titech.ac.jp:00065378
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 東京科学大学 : 東京科学大学リサーチリポジトリ(T2R2)