AlN Films Epitaxialy Formed by Direct Nitridation of Sapphire using Aluminum Oxynitride as a Buffer Layer

Publisher: State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, (The Electrochemical Society), Philadelphia, PA, USA, May (2002)

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Material Type: 図書
Title: AlN Films Epitaxialy Formed by Direct Nitridation of Sapphire using Aluminum Oxynitride as a Buffer Layer
Author/Editor: 福山, 博之
FUKUYAMA, HIROYUKI
Author Heading: 福山, 博之
FUKUYAMA, HIROYUKI
Publication, Distribution, etc.: State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, (The Electrochemical Society), Philadelphia, PA, USA, May (2002)
Publication Date: 2002
Publication Date (W3CDTF): 2002
Periodical title: State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, (The Electrochemical Society), Philadelphia, PA, USA, May (2002)
No. or year of volume/issue: 2002-3
Volume: 2002-3
Pages: 76-82
Text Language Code: eng
Target Audience: 一般
Note (General): identifier:oai:t2r2.star.titech.ac.jp:00072937
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 東京工業大学 : 東京工業大学リサーチリポジトリ