A study on lateral-type spin-photodiodes based on metal-insulator-semiconductor junctions

• Material Type: 博士論文
• Title: A study on lateral-type spin-photodiodes based on metal-insulator-semiconductor junctions
• Author/Editor: Roca, Ronel C I; Roca, Ronel Christian Intal
• Author Heading: Roca, Ronel C I; Roca, Ronel Christian Intal
• Publication Date: 2017-09
• Publication Date (W3CDTF): 2017
• Degree grantor/type: 東京工業大学
• Dissertation Number: 甲第10660号
• Degree Type: 博士(工学)
• Subject Heading: Semiconductor Spintronics, Optical Spin Injection, Electrical Spin Detection
• Target Audience: 一般
• Note (General): 出版タイプ： VoR; A comprehensive study on lateral-type spin-photodiodes based on metal-insulator-semiconductor junctions operating at room temperature is presented. The performance of a simple cleaved-edge Fe/AlOx/p-GaAs Schottky junction spin-photodiode has been investigated. In addition to conventional sidewall illumination experiments, oblique angle surface illumination measurements were also carried out. Experimental results show a spin collection efficiency F of 0.14% for sidewall illumination, and an improved F of 1.3% for oblique angle surface illumination. A simulation model based on the optical selection rules, carrier and spin drift-diffusion, and spin dependent tunneling has also been developed. Simulation results show a good match with experiment data for oblique angle illumination. A further comparison of experiment and simulation results suggests that the low F for side illumination has been caused either by the damage to the AlOx tunnel barrier at the cleaved edge or by magnetic edge curling. Furthermore, a novel Fe/AlOx/p-InGaAs spin-photodiode design with a refracting facet has also been presented. An experimental F of 0.4% has been achieved for the fabricated refracting-facet spin-photodiodes. This value is the highest so far for purely lateral spin-photodiodes. In addition to experiments, a simulation model for the refracting-fact spin-photodiode involving the optical selection rules, carrier and spin collection probability, and spin-dependent tunneling, has also been developed. Simulation results show that a potential F up to 19% is achievable for the proposed spin-photodiode design. A comparison of the simulation and experimental results suggests that the quality of the Fe electrode is poor, and that an improvement of the electrode quality will lead to a significantly enhancement in the F. With these results, a significantly improved understanding of the physics of lateral spin-photodiodes, as well as a practical demonstration of a lateral spin-photodiode, has been achieved.; identifier:oai:t2r2.star.titech.ac.jp:50383801
• Format (IMT): application/pdf
• Source: http://t2r2.star.titech.ac.jp/rrws/file/CTT100749773/ATD100000413/PhD Dissertation Final.pdf （fulltext）; http://t2r2.star.titech.ac.jp/rrws/file/CTT100749773/ATD100000413/PhD%20Dissertation%20Final.pdf
• Access Restrictions: インターネット公開
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 東京科学大学 : 東京科学大学リサーチリポジトリ(T2R2)