Development of device isolation technologies for GaN-based field-effect transistors

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Development of device isolation technologies for GaN-based field-effect transistors

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Material Type: 博士論文
Title: Development of device isolation technologies for GaN-based field-effect transistors
Author/Editor: 江, 瀅
Author Heading: 江, 瀅ジャン, イン
Publication Date: 2015-09-10
Publication Date (W3CDTF): 2015-09-10
Alternative Title: 窒化ガリウムトランジスタにおける素子間分離技術の研究
Dissertation Number: 甲先第228号
Text Language Code: und
Subject Heading: Gallium nitride
device isolation
field isolation
AlGaN/GaN HFET
GaN MOSFET
Target Audience: 一般
Format (IMT): application/pdf
Source: fulltext
https://tokushima-u.repo.nii.ac.jp/record/2002746/files/LID201602081001.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 徳島大学 : 徳島大学機関リポジトリ