Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer

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Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer

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Material Type: 博士論文
Title: Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer
Author/Editor: 蒲, 涛飞
Author Heading: 蒲, 涛飞ホ, トウヒ
Publication Date: 2019-03-06
Publication Date (W3CDTF): 2019-03-06
Alternative Title: P-GaNキャップ層を有するノーマリオフ型AlGaN/GaNヘテロ構造電界効果トランジスタに関する研究
Dissertation Number: 甲先第330号
Text Language Code: und
Subject Heading: AlGaN/GaN heterostructure
normally-off
blocking layer
gate-first
metal-insulator-semiconductor
Target Audience: 一般
Format (IMT): application/pdf
Source: fulltext
https://tokushima-u.repo.nii.ac.jp/record/2006425/files/k3290_fulltext.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 徳島大学 : 徳島大学機関リポジトリ