Research on Interface State and Reliability of 4H-SiC MOSFETs with Thermal Gate Oxide

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Research on Interface State and Reliability of 4H-SiC MOSFETs with Thermal Gate Oxide

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Material Type: 博士論文
Title: Research on Interface State and Reliability of 4H-SiC MOSFETs with Thermal Gate Oxide
Author/Editor: 許, 恒宇
Author Heading: 許, 恒宇キョ, コウウ
Publication Date: 2020-09-23
Publication Date (W3CDTF): 2020-09-23
Alternative Title: 4H炭化ケイ素MOSFETゲート酸化膜の界面準位及び信頼性に関する研究
Dissertation Number: 甲先第378号
Text Language Code: und
Subject Heading: Silicon carbide
MOSFET
Interface State
Reliability
Thermal Gate Oxide
Target Audience: 一般
Format (IMT): application/pdf
Source: fulltext
https://tokushima-u.repo.nii.ac.jp/record/2008244/files/k3448_fulltext.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 徳島大学 : 徳島大学機関リポジトリ