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文書・図像類

不揮発性メモリ用Cr2Ge2Te6薄膜の相変化機構とその抵抗スイッチング挙動

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不揮発性メモリ用Cr2Ge2Te6薄膜の相変化機構とその抵抗スイッチング挙動

Material type
文書・図像類
Author
畑山, 祥吾
Publisher
-
Publication date
-
Material Format
Digital
Capacity, size, etc.
-
NDC
-
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Notes on use

Note (General):

博士学位論文の要旨及び審査結果の要旨 (Summary of Thesis(DR))

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  • Tohoku University Repository(TOUR)

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Digital

Material Type
文書・図像類
Author/Editor
畑山, 祥吾
Author Heading
No. or year of volume/issue
64
Issue
64
Text Language Code
jpn
Target Audience
一般
Note (General)
博士学位論文の要旨及び審査結果の要旨 (Summary of Thesis(DR))
Access Restrictions
限定公開