II-VI族化合物半導体の低温エピタキシャル成長に関する研究

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Material Type: 文書・図像類
Title: II-VI族化合物半導体の低温エピタキシャル成長に関する研究
Author/Editor: 野田, 大二
Author Heading: 野田, 大二
Publication, Distribution, etc.: 静岡大学大学院電子科学研究科
Publication Date: 2001-03-30
Publication Date (W3CDTF): 2001-03-30
Alternative Title: Study of low temperature epitaxial growth for II-VI compound semiconductors
Periodical title: 静岡大学大学院電子科学研究科研究報告
No. or year of volume/issue: 22
Volume: 22
Pages: 162-164
ISSN (Periodical Title): PISSN : 03885070
Text Language Code: jpn
NDC: 549
Target Audience: 一般
Note (General): 博士学位論文の要旨学位記番号:工博甲第204号
甲第221号
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Access Restrictions: インターネット公開
Related Material: 000000357038
Periodical Title (NCID): AN00103168
https://ci.nii.ac.jp/ncid/AN00103168
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 静岡大学 : 静岡大学学術リポジトリ