Ⅲ族窒化物半導体を用いた中性子検出半導体の開発

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24686014

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Material Type: 文書・図像類
Title: Ⅲ族窒化物半導体を用いた中性子検出半導体の開発
Author/Editor: 中野, 貴之
Author Heading: 中野, 貴之
Publication Date: 2016-06-16
Publication Date (W3CDTF): 2016-06-16
Alternative Title: Development of group-III nitride double polar selective area growth process and fablication of nanostructure device
Text Language Code: jpn
Subject Heading: 中性子検出
半導体検出器
III族窒化物半導体
エピタキシャル成長
放射線検出特性
NDC: 501
Target Audience: 一般
Note (General): 2012年度～2015年度科学研究費助成事業(若手研究(A))研究成果報告書
Access Restrictions: 限定公開
Related Material: 24686014
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 静岡大学 : 静岡大学学術リポジトリ