高誘電率ゲート絶縁膜の高機能化に向けた化学構造および界面反応に関する研究

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Material Type: 博士論文
Title: 高誘電率ゲート絶縁膜の高機能化に向けた化学構造および界面反応に関する研究
Title Transcription: コウユウデンリツ　ゲート　ゼイツエンマク　ノ　コウキノウカ　ニ　ムケタ　カガク　コウゾウ　オヨビ　カイメン　ハンノウ　ニ　カンスル　ケンキュウ
Author/Editor: 山元, 隆志
Author Heading: 山元, 隆志ヤマモト, タカシ
Alternative Title: Study on chemical structure and interface reaction of advanced high-k gate dielectrics
Degree grantor/type: 大阪大学
Date Granted: 2012-03-22
Dissertation Number: 甲第15727号
Degree Type: 博士（工学）
Text Language Code: jpn
Subject Heading: high-k
SIMS
XPS
NEXAFS
Target Audience: 一般
Format (IMT): application/pdf
Source: 25465_Dissertation.pdf （fulltext）
https://ir.library.osaka-u.ac.jp/repo/ouka/all/26870/25465_Dissertation.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 大阪大学 : 大阪大学学術情報庫　桜華