MOSデバイスの特性劣化の機構およびその評価法に関する研究

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Material Type: 博士論文
Title: MOSデバイスの特性劣化の機構およびその評価法に関する研究
Author/Editor: 安田, 直樹
Author Heading: 安田, 直樹ヤスダ, ナオキ
Alternative Title: Study on Device Degradation of MOSFETs and its Evalua-tion Methods
Degree grantor/type: 大阪大学
Date Granted: 1992-03-25
Dissertation Number: 甲第04571号
Degree Type: 博士（工学）
Text Language Code: und
Target Audience: 一般
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 大阪大学 : 大阪大学学術情報庫　桜華