Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium Nitride

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Summary, etc.：: Showing strong photoluminescence and electroluminescence with a narrow linewidth even at room temperature, lanthanide doped in gallium nitride (GaN) s...

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Material Type: 文書・図像類
Title: Photoluminescence Properties of Praseodymium Ions Implanted into Micro-Regions in Gallium Nitride
Author/Editor: 佐藤, 真一郎
Deki, Manato
Nakamura, Tohru
Nishimura, Tomoaki
Stavrevski, Daniel
Gibson, Brant
Ohshima, Takeshi
佐藤真一郎
大島武
Author Heading: 佐藤, 真一郎
Deki, Manato
Nakamura, Tohru
Nishimura, Tomoaki
Stavrevski, Daniel
Gibson, Brant
Ohshima, Takeshi
佐藤真一郎
大島武
Publication Date: 2018-11-15
Publication Date (W3CDTF): 2018-11-15
Text Language Code: eng
Target Audience: 一般
Note (General): IWN2018国際シンポジウム参加の為
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構学術機関リポジトリ