Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model

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Summary, etc.：: Improvement of the resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extr...

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Material Type: 文書・図像類
Title: Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model
Author/Editor: 佐々木, 明
Sasaki, Akira
Author Heading: 佐々木, 明
Sasaki, Akira
Publication Date: 2019-02-28
Publication Date (W3CDTF): 2019-02-28
Text Language Code: eng
Target Audience: 一般
Note (General): SPIE Advanced Lithography会議出席
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構学術機関リポジトリ