NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties

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Note (General)：: The 2nd International Forum on Quantum Metrology and Sensing (IFQMS)

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Summary, etc.：: Recently, NCVSi- centers in silicon carbide (SiC), i.e. negatively-charged pairs of silicon vacancy (VSi) and nitrogen (N) atom on an adjacent carbon ...

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Material Type: 文書・図像類
Title: NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties
Author/Editor: Sato, Shinichiro
Narahara, Takuma
Higuchi, Taisei
Onoda, Shinobu
Yamazaki, Yuichi
Hijikata, Yasuto
C. Gibson, Brant
D. Greentree, Andrew
Ohshima, Takeshi
Author Heading: Sato, Shinichiro
Narahara, Takuma
Higuchi, Taisei
Onoda, Shinobu
Yamazaki, Yuichi
Hijikata, Yasuto
C. Gibson, Brant
D. Greentree, Andrew
Ohshima, Takeshi
Sato, Shinichiro
Narahara, Takuma
Higuchi, Taisei
Onoda, Shinobu
Yamazaki, Yuichi
Ohshima, Takeshi
Publication Date: 2019-12-17
Publication Date (W3CDTF): 2019-12-17
Text Language Code: eng
Target Audience: 一般
Note (General): The 2nd International Forum on Quantum Metrology and Sensing (IFQMS)
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構学術機関リポジトリ