Three-temperature model for laser processing of silicon and its dependence on laser parameters

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Summary, etc.：: Laser excitation and damage in silicon is studied using Three-Temperature Model. The quasi-temperatures of electron, hole and lattice sub-systems are ...

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Material Type: 文書・図像類
Title: Three-temperature model for laser processing of silicon and its dependence on laser parameters
Author/Editor: Venkat, Prachi
Tomohito, Otobe
Author Heading: Venkat, Prachi
Tomohito, Otobe
Venkat, Prachi
Tomohito, Otobe
Publication Date: 2022-04-19
Publication Date (W3CDTF): 2022-04-19
Text Language Code: eng
Target Audience: 一般
Note (General): The 4th Smart Laser Processing Conference (SLPC-OPIC 2022)
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構学術機関リポジトリ