窒化物半導体を用いた高耐圧電界効果トランジスタの高性能化に関する研究

Search by Bookstore

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

NAGOYA Repository
Digital
You can check the holdings of institutions and databases with which Institutional Repositories DataBase(IRDB)(Institutional Repository) is linked at the site of Institutional Repositories DataBase(IRDB)(Institutional Repository).
NAGOYA Repository

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 博士論文
Title: 窒化物半導体を用いた高耐圧電界効果トランジスタの高性能化に関する研究
Author/Editor: 杉山, 貴之
Author Heading: 杉山, 貴之
Publication Date: 2014-03-25
Publication Date (W3CDTF): 2014-03-25
Alternative Title: Study on high performance nitride-based high breakdown voltage field effect transistor
Degree grantor/type: 名古屋大学
Date Granted: 2014-03-25
Dissertation Number: 甲第10634号
Degree Type: 博士(工学)
Text Language Code: jpn
Target Audience: 一般
Format (IMT): application/pdf
Source: k10634_thesis.pdf （fulltext）
https://nagoya.repo.nii.ac.jp/record/18090/files/k10634_thesis.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 名古屋大学 : 名古屋大学学術機関リポジトリ