Si基板上GaN高周波パワーデバイスに向けたAlN下地層及びGaN層の高品質化に関する研究

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Material Type: 博士論文
Title: Si基板上GaN高周波パワーデバイスに向けたAlN下地層及びGaN層の高品質化に関する研究
Author/Editor: 松本, 光二
Author Heading: 松本, 光二
Publication Date: 2018-09-27
Publication Date (W3CDTF): 2018-09-27
Alternative Title: Study on improvement of characteristics of AlN buffer and GaN layers for GaN high frequency power device on Si substrate
Degree grantor/type: 名古屋大学
Date Granted: 2018-09-27
Dissertation Number: 甲第12499号
Degree Type: 博士(工学)
Text Language Code: jpn
Target Audience: 一般
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 名古屋大学 : 名古屋大学学術機関リポジトリ