Study on new plasma processes for growth and etching of GaN thin films

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Material Type: 博士論文
Title: Study on new plasma processes for growth and etching of GaN thin films
Author/Editor: TANIDE, Atsushi
谷出, 敦
Author Heading: TANIDE, Atsushi
谷出, 敦
Publication Date: 2020-03-25
Publication Date (W3CDTF): 2020-03-25
Alternative Title: GaNの新しいプラズマ成膜及びエッチングに関する研究
Degree grantor/type: 名古屋大学
Date Granted: 2020-03-25
Dissertation Number: 甲第13136号
Degree Type: 博士(工学)
Text Language Code: eng
Target Audience: 一般
Format (IMT): application/pdf
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 名古屋大学 : 名古屋大学学術機関リポジトリ