Study on High Quality bulk GaN Single Crystal Growth by Halide Vapor Phase Epitaxy

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Study on High Quality bulk GaN Single Crystal Growth by Halide Vapor Phase Epitaxy

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Material Type: 博士論文
Title: Study on High Quality bulk GaN Single Crystal Growth by Halide Vapor Phase Epitaxy
Author/Editor: 劉, 強
Author Heading: 劉, 強
Publication Date: 2020-09-28
Publication Date (W3CDTF): 2020-09-28
Alternative Title: ハライド気相成長法による高品質バルクGaN単結晶成長に関する研究
Degree grantor/type: 名古屋大学
Date Granted: 2020-09-28
Dissertation Number: 甲第13309号
Degree Type: 博士(工学)
Text Language Code: eng
Target Audience: 一般
Format (IMT): application/pdf
Source: k13309_thesis （fulltext）
https://nagoya.repo.nii.ac.jp/record/30580/files/k13309_thesis.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 名古屋大学 : 名古屋大学学術機関リポジトリ