次世代メモリデバイスへ向けて原子層堆積法により作製したHfxZr1?xO2薄膜の強誘電性に関する研究

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Material Type: 博士論文
Title: 次世代メモリデバイスへ向けて原子層堆積法により作製したHfxZr1?xO2薄膜の強誘電性に関する研究
Author/Editor: 女屋, 崇
Author Heading: 女屋, 崇
Publication Date: 2021-01-01
Publication Date (W3CDTF): 2021-01-01
Alternative Title: Study on Ferroelectricity of HfxZr1?xO2 Thin Films Fabricated by Atomic Layer Deposition for Future Memory Device Applications
Pages: i-207
Degree grantor/type: 明治大学
Date Granted: 2021-03-26
Dissertation Number: 甲第1018号
Degree Type: 博士（工学）
Text Language Code: jpn
Target Audience: 一般
Note (General): 2021
Format (IMT): application/pdf
Source: 論文本文（fulltext）
https://meiji.repo.nii.ac.jp/record/15229/files/onaya_2021_rikou.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 明治大学 : 明治大学学術成果リポジトリ