窒化物半導体の表面構造と成長過程に関する理論的研究

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Material Type: 博士論文
Title: 窒化物半導体の表面構造と成長過程に関する理論的研究
Author/Editor: 草場, 彰
Author Heading: 草場, 彰クサバ, アキラ
Publication Date: 2019-03-20
Publication Date (W3CDTF): 2019-03-20
Contributor: 寒川, 義裕
高橋, 厚史
伊藤, 智徳
Degree grantor/type: 九州大学
Date Granted: 2019-03-20
Dissertation Number: 17102甲第14544号
Degree Type: 博士（工学）
DOCTOR OF ENGINEERING
Text Language Code: jpn
Target Audience: 一般
Note (General): 主
工学_航空宇宙工学
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 九州大学 : 九州大学学術情報リポジトリ