次世代パワー半導体用高精度コンパクトモデルの開発とスケーリング則の確立
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Table of Contents
1 Background||2 Objective||3 Structure Oriented Analytical Modeling for Modern Trench Gate IGBT||4 IGBT Compact Modeling for Wide Range Structure and Temperature||5 IGBT Scaling Principle Toward Shallow Trench Structure||6 The Future: Shallow Trench IGBT Advantages and Related Issues||7 Conclusion||8 List of Tables||9 List of Figures||10 References||11 Research History
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Bibliographic Record
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- Material Type
- 博士論文
- Author/Editor
- 田中, 雅浩
- Author Heading
- Alternative Title
- Novel Structure Oriented Compact Model and Scaling Rule for Next Generation Power Semiconductor Devices
- Degree grantor/type
- 九州工業大学
- Date Granted
- 2012-09-30
- Dissertation Number
- 甲第340号
- Degree Type
- 博士（工学）
- Text Language Code
- eng