半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長

Name of awarding university/degree: 京都大学,博士(工学),Doctor of Philosophy (Engineering)

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Material Type: 博士論文
Title: 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長
Author/Editor: Tsujimura, Ayumu
Author Heading: Tsujimura, Ayumu
Publication, Distribution, etc.: 京都大学 (Kyoto University)
Publication Date: 2012-09-24
Publication Date (W3CDTF): 2012-09-24
Alternative Title: Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes
Contributor: 平尾, 一之
田中, 勝久
三浦, 清貴
Degree grantor/type: 京都大学
Date Granted: 2012-09-24
Dissertation Number: 乙第12695号
Degree Type: 博士(工学)
Doctor of Philosophy (Engineering)
Text Language Code: eng
Alias of Author: 辻村, 歩
ツジムラ, アユム
Subject Heading: ZnSe
GaN
laser diode
MBE
MOVPE
epitaxial growth
NDC: 500
Target Audience: 一般
DOI: 10.14989/doctor.r12695
Format (IMT): application/pdf
Source: D_Tsujimura_Ayumu.pdf （fulltext）
http://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/161023/2/D_Tsujimura_Ayumu.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 京都大学 : 京都大学学術情報リポジトリ